Terahertz Microstrip Elevated Stack Antenna Technology on GaN-on-Low Resistivity Silicon Substrates for TMIC

In this paper we demonstrate a THz microstrip stack antenna on GaN-on-low resistivity silicon substrates (ρ < 40 Ω.cm). To reduce losses caused by the substrate and to enhance performance of the integrated antenna at THz frequencies, the driven patch is shielded by silicon nitride and gold in addition to a layer of benzocyclobutene (BCB). A second circular patch is elevated in air using gold posts, making this design a stack configuration. The demonstrated antenna shows a measured resonance frequency in agreement with the modeling at 0.27 THz and a measured S11 as low as −18 dB was obtained. A directivity, gain and radiation efficiency of 8.3 dB, 3.4 dB, and 32% respectively was exhibited from the 3D EM model. To the authors' knowledge, this is the first demonstrated THz integrated microstrip stack antenna for TMIC (THz Monolithic Integrated Circuits) technology; the developed technology is suitable for high performance III-V material on low resistivity/high dielectric substrates

InGaN micro-LEDs integrated onto an ultra-thin, colloidal quantum dot functionalized glass platform

We demonstrate an integrated color-converting device by transfer printing blue-emitting micro-sized InGaN LEDs onto an ultra-thin glass platform functionally enhanced with colloidal quantum dots. Color conversion and waveguiding properties of the structure are presented

Sulfuric acid and hydrogen peroxide surface passivation effects on AlGaN/GaN high electron mobility transistors

In this work, we have compared SiNx passivation, hydrogen peroxide, and sulfuric acid treatment on AlGaN/GaN HEMTs surface after full device fabrication on Si substrate. Both the chemical treatments resulted in the suppression of device pinch-off gate leakage current below 1 μA/mm, which is much lower than that for SiNx passivation. The greatest suppression over the range of devices is observed with the sulfuric acid treatment. The device on/off current ratio is improved (from 104–105 to 107) and a reduction in the device sub-threshold (S.S.) slope (from ∼215 to 90 mV/decade) is achieved. The sulfuric acid is believed to work by oxidizing the surface which has a strong passivating effect on the gate leakage current. The interface trap charge density (Dit ) is reduced (from 4.86 to 0.90 × 1012 cm−2 eV−1), calculated from the change in the device S.S. The gate surface leakage current mechanism is explained by combined Mott hopping conduction and Poole Frenkel models for both untreated and sulfuric acid treated devices. Combining the sulfuric acid treatment underneath the gate with the SiNx passivation after full device fabrication results in the reduction of Dit and improves the surface related current collapse

Impact of stress in ICP-CVD SiN x passivation films on the leakage current in AlGaN/GaN HEMTs

The impact of the stress in room temperature inductively coupled plasma chemical vapour deposited (ICP-CVD) SiN x surface passivation layers on off-state drain ( I DS-off) and gate leakage currents ( I GS) in AlGaN/GaN high electron mobility transistors (HEMTs) is reported. I DS-off and I GS in 2 μm gate length devices were reduced by up to four orders of magnitude to ∼10 pA/mm using a compressively stressed bilayer SiN x passivation scheme. In addition, I on/ I off of ∼10 11 and subthreshold slope of 68 mV/dec were obtained using this strain engineered surface passivation approach

Transfer printed multi-color integrated devices for visible light communication applications

Integrated multi-color devices for visible light communication applications are fabricated by transfer printing blue-emitting GaN light emitting diodes (LEDs) onto a green-emitting LED array and a colloidal quantum dot color-converter structure

Effects of surface plasma treatment on threshold voltage hysteresis and instability in metal-insulator-semiconductor (MIS) AlGaN/GaN heterostructure HEMTs

In a bid to understand the commonly observed hysteresis in the threshold voltage (VTH) in AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors during forward gate bias stress, we have analyzed a series of measurements on devices with no surface treatment and with two different plasma treatments before the in-situ Al2O3 deposition. The observed changes between samples were quasi-equilibrium VTH, forward bias related VTH hysteresis, and electrical response to reverse bias stress. To explain these effects, a disorder induced gap state model, combined with a discrete level donor, at the dielectric/semiconductor interface was employed. Technology Computer-Aided Design modeling demonstrated the possible differences in the interface state distributions that could give a consistent explanation for the observations

Dark solitons in ferromagnetic chains with first- and second-neighbor interactions

We study the ferromagnetic spin chain with both first- and second-neighbor interactions. We obtained the condition for the appearance and stability of bright and dark solitons for arbitrary wave number inside the Brillouin zone. The influence of the second-neighbor interaction and the anisotropy on the soliton properties is considered. The scattering of dark solitons from point defects in the discrete spin chain is investigated numerically.Comment: 7 pages,5 figure

MOVPE studies of zincblende GaN on 3C-SiC/Si(0 0 1)

Cubic zincblende GaN films were grown by metalorganic vapour-phase epitaxy on 3C-SiC/Si (0 0 1) templates and characterized using Nomarski optical microscopy, atomic force microscopy, X-ray diffraction, and transmission-electron microscopy. In particular, structural properties were investigated of films where the growth temperature of a GaN epilayer varied in the range of 830 °C to 910 °C and the gas-phase V/III-ratio varied from 15 to 1200 at a constant reactor pressure of 300 Torr. It was observed that with increasing epi temperature at a constant V/III-ratio of 76, the film surface consisted of micrometer-sized elongated features aligned along [1 –1 0] up to a temperature of 880 °C. The zincblende phase purity of such samples was generally high with a wurtzite fraction of less than 1%. When grown above 880 °C the GaN surface morphology degraded and the zincblende phase purity reduced as a result of inclusions with the wurtzite phase. A progressive narrowing of the 002 reflection with increasing epi growth temperature suggested an improvement of the film mosaicity. With increasing V/III-ratio at a constant growth temperature of 880 °C, the film surface formed elongated features aligned along [1 –1 0] at V/III values between 38 and 300 but the morphology became granular at both lower and higher V/III values. The zincblende phase purity is high at V/III values below 300. A slight broadening of the 002 X-ray diffraction reflection with increasing V/III-ratio indicated a small degradation of mosaicity. Scanning electron diffraction analyses of cross-sectional transmission-electron micrographs taken of a selection of samples illustrated the spatial distribution, quantity and structure of wurtzite inclusions within the zincblende GaN matrix. Within the limits of this study, the optimum epilayer growth conditions at a constant pressure of 300 Torr were identified to be at a temperature around 860 °C to 880 °C and a V/III-ratio in the range of 23 to 76, resulting in relatively smooth, zincblende GaN films without significant wurtzite contamination

Grain growth of natural and synthetic ice at 0 °C

Grain growth can modify the microstructure of natural ice, including the grain size and crystallographic preferred orientation (CPO). To better understand grain-growth processes and kinetics, we compared microstructural data from synthetic and natural ice samples of similar starting grain sizes that were annealed at the solidus temperature (0 ∘C) for durations of a few hours to 33 d. The synthetic ice has a homogeneous initial microstructure characterized by polygonal grains, little intragranular distortion, few bubbles, and a near-random CPO. The natural ice samples were subsampled from ice cores acquired from the Priestley Glacier, Antarctica. This natural ice has a heterogeneous microstructure characterized by a considerable number of air bubbles, widespread intragranular distortion, and a CPO. During annealing, the average grain size of the natural ice barely changes, whereas the average grain size of the synthetic ice gradually increases. These observations demonstrate that grain growth in natural ice can be much slower than in synthetic ice and therefore that the grain-growth law derived from synthetic ice cannot be directly applied to estimate the grain-size evolution in natural ice with a different microstructure. The microstructure of natural ice is characterized by many bubbles that pin grain boundaries. Previous studies suggest that bubble pinning provides a resisting force that reduces the effective driving force of grain-boundary migration and is therefore linked to the inhibition of grain growth observed in natural ice. As annealing progresses, the number density (number per unit area) of bubbles on grain boundaries in the natural ice decreases, whilst the number density of bubbles in the grain interiors increases. This observation indicates that some grain boundaries sweep through bubbles, which should weaken the pinning effect and thus reduce the resisting force for grain-boundary migration. Some of the Priestley ice grains become abnormally large during annealing. We speculate that the contrast of dislocation density amongst neighbouring grains, which favours the selected growth of grains with low dislocation densities, and bubble pinning, which inhibits grain growth, are tightly associated with abnormal grain growth. The upper 10 m of the Priestley ice core has a weaker CPO and better-developed second maximum than deeper samples. The similarity of this difference to the changes observed in annealing experiments suggests that abnormal grain growth may have occurred in the upper 10 m of the Priestley Glacier during summer warming